Suppressor. 1KSMB47A Datasheet

1KSMB47A Datasheet PDF

Part 1KSMB47A
Description Surface Mount Transient Voltage Suppressor
Feature 1KSMB SERIES Taiwan Semiconductor CREAT BY ART 1000W, 10V - 100V Surface Mount Transient Voltage Sup.
Manufacture Taiwan Semiconductor
Datasheet
Download 1KSMB47A Datasheet





1KSMB47A
1KSMB SERIES
Taiwan Semiconductor
CREAT BY ART
1000W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 qualified
DO-214AA (SMB)
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.11 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak power dissipation at TA=25°C, tp=1ms (Note 1)
Steady state power dissipation
PPK
PD
1000
5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2)
VF
3.5 / 5.0
Typical thermal resistance
RθJL
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2
Note 2: VF=3.5V for Devices of VBR50V and VF=5.0V Max. for Devices VBR>50V
20
100
- 55 to +175
- 55 to +175
Devices for Bipolar Applications
1. For Bidirectional use CA suffix
ORDER INFORMATION (EXAMPLE)
1KSMB39A R5G
Green compound code
Packing code
Part no.
UNIT
Watts
Watts
A
Volts
oC/W
°C
°C
Document Number: DS_D1408012
Version: E15



1KSMB47A
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
10
1
1 10 100 1000
tp, PULSE WIDTH, (μs)
140
120
100
80
60
40
20
0
0
FIG. 3 CLAMPING POWER PULSE WAVEFORM
tr=10μs
Peak Value
IPPM
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
Half Value-IPPM/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
td
0.5 1 1.5 2 2.5 3 3.5 4
t, TIME ms
10000
1000
FIG. 5 TYPICAL JUNCTION CAPACITANCE
VR=0
100
f=1.0MHz
Vsig=50mVp-p
MEASURED at
STAND-OFF
VOLTAGE,Vwm
10
1
10
V(BR), BREAKDOWN VOLTAGE (V)
100
1KSMB SERIES
Taiwan Semiconductor
FIG.2 PULSE DERATING CURVE
125
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (oC)
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
100
8.3ms Single Half Sine Wave
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
Document Number: DS_D1408012
Version: E15




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