Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 50 to 300 V VRRM • Not ESD Sensitive
Note:...
Silicon Standard Recovery Diode
Features High Surge Capability Types from 50 to 300 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N1183 thru 1N1187R
VRRM = 50 V - 300 V IF = 35 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R)
Repetitive peak reverse
voltage RMS reverse
voltage DC blocking
voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms
50 100 200 35 70 140 50 100 200 35 35 35
595 595 595
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
300 210 300 35
595
-55 to 150 -55 to 150
Unit
V V V A
A
°C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Unit
Diode forward
voltage
VF IF = 35 A, Tj = 25 °C 1.2 1.2 1.2 1.2 V
Reverse current
IR
VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 140 °C
10 10
10 10
10 10
10 μA 10 mA
Thermal characteristics
Thermal resistance, junction case
RthJC
0.25 0.25 0.25 0.25 °C/W
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1
1N1183 thru 1N1187R
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
1N1183 thru 1N1187R
Package dimensions and terminal confi...