DatasheetsPDF.com

1N1189 Datasheet

Part Number 1N1189
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Standard Recovery Diode
Datasheet 1N1189 Datasheet1N1189 Datasheet (PDF)

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N1188 (R) 1N1189 (R) Repetitive peak reverse voltage RMS reverse .

  1N1189   1N1189






Part Number 1N1189
Manufacturers Digitron Semiconductors
Logo Digitron Semiconductors
Description STANDARD RECOVERY RECTIFIERS
Datasheet 1N1189 Datasheet1N1189 Datasheet (PDF)

1N1183-1N1190, 1N3765-1N3768 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Average forward current Maximum surge current Maximum I2t for fusing Maximum peak forward voltage Maximum peak reverse cu.

  1N1189   1N1189







Part Number 1N1189
Manufacturers International Rectifier
Logo International Rectifier
Description 35/40/and 60 Amp Power Silicon Rectifier Diodes
Datasheet 1N1189 Datasheet1N1189 Datasheet (PDF)

.

  1N1189   1N1189







Part Number 1N1189
Manufacturers America Semiconductor
Logo America Semiconductor
Description Silicon Standard Recovery Diode
Datasheet 1N1189 Datasheet1N1189 Datasheet (PDF)

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

  1N1189   1N1189







Part Number 1N1189
Manufacturers Naina Semiconductor
Logo Naina Semiconductor
Description Standard Recovery Diode
Datasheet 1N1189 Datasheet1N1189 Datasheet (PDF)

Naina Semiconductor Ltd. 1N1187 thru 1N1190R Standard Recovery Diode, 35A Features  Glass passivated die  Low forward voltage drop  High surge capability  Low leakage current  Normal and Reverse polarity  Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1187(R) Repetitive peak reverse voltage VRRM 300 RMS reverse voltage VRMS 210 DC blocking voltage VDC 300 Continuous forward current TC ≤.

  1N1189   1N1189







Part Number 1N1189
Manufacturers Microsemi
Logo Microsemi
Description Silicon Power Rectifier
Datasheet 1N1189 Datasheet1N1189 Datasheet (PDF)

.

  1N1189   1N1189







Silicon Standard Recovery Diode

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N1188 (R) 1N1189 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms 400 280 400 35 595 -55 to 150 -55 to 150 500 350 500 35 595 -55 to 150 -55 to 150 1N1190 (R) 600 420 600 35 595 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1188 (R) Diode forward vol.


2019-06-27 : FR12DR02    FR12BR02    CMT-555    CHT-CG50LP    CHT-555    FR12GR02    FR12G02    FR12J02    FR12D02    1N1190R   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)