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1N1190 Datasheet

Part Number 1N1190
Manufacturers International Rectifier
Logo International Rectifier
Description 35/40/and 60 Amp Power Silicon Rectifier Diodes
Datasheet 1N1190 Datasheet1N1190 Datasheet (PDF)

  1N1190   1N1190
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Part Number 1N1190
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Standard Recovery Diode
Datasheet 1N1190 Datasheet1N1190 Datasheet (PDF)

  1N1190   1N1190
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N1188 (R) 1N1189 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = .






Part Number 1N1190
Manufacturers Diotec Semiconductor
Logo Diotec Semiconductor
Description Silicon-Power Rectifiers
Datasheet 1N1190 Datasheet1N1190 Datasheet (PDF)

  1N1190   1N1190
1N 1183 ... 1N 1190, 1N 3766, 1N 3768 PBY 301 ... PBY 307 Silicon-Power Rectifiers Silizium-Leistungs-Gleichrichter 13 14 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgehäuse 37 35 A 50…1000 V DO-5 6g Ø3.5 Type Weight approx. – Gewicht ca. SW17 M6 Standard polarity: Cathode to stud / am Gewinde Index R: Anode to stud / am Gewinde (e.g. 1N 1183 A/R) Standard packaging: bulk Standard Lieferform: lose im Karton Dimensions / Maße in mm Maximum ratings Type Typ 1N 1183 1N 1184 1N 1186 1N 1188 1N 1190 1N 3766 1N 3768 = = = = = = = PBY 301 PBY 302 PBY 303 PBY 304 PBY 305 PBY 306 PBY 307 Repetitive peak reverse voltage Perio.






Part Number 1N1190
Manufacturers Naina Semiconductor
Logo Naina Semiconductor
Description Standard Recovery Diode
Datasheet 1N1190 Datasheet1N1190 Datasheet (PDF)

  1N1190   1N1190
Naina Semiconductor Ltd. 1N1187 thru 1N1190R Standard Recovery Diode, 35A Features  Glass passivated die  Low forward voltage drop  High surge capability  Low leakage current  Normal and Reverse polarity  Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1187(R) Repetitive peak reverse voltage VRRM 300 RMS reverse voltage VRMS 210 DC blocking voltage VDC 300 Continuous forward current TC ≤ 140oC IF(AV) 35 Surge non-repetitive forward current, half-sine wave TC = 25oC IFSM 595 Maximum peak forward voltage IF = 35 A, TJ = 25oC VF 1.2 Reverse current TJ = 25oC TJ = 140oC IR 1.






Part Number 1N1190
Manufacturers Microsemi
Logo Microsemi
Description Silicon Power Rectifier
Datasheet 1N1190 Datasheet1N1190 Datasheet (PDF)

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Part Number 1N1190
Manufacturers Digitron Semiconductors
Logo Digitron Semiconductors
Description STANDARD RECOVERY RECTIFIERS
Datasheet 1N1190 Datasheet1N1190 Datasheet (PDF)

  1N1190   1N1190
1N1183-1N1190, 1N3765-1N3768 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Average forward current Maximum surge current Maximum I2t for fusing Maximum peak forward voltage Maximum peak reverse current Maximum peak reverse current Maximum thermal resistance Maximum recommended operating frequency Storage temperature range Operating junction temperature range *Pulse test: Pulse width 300µsec. D.






35/40/and 60 Amp Power Silicon Rectifier Diodes

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2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


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