1N1190 Datasheet
Part Number |
1N1190 |
Manufacturers |
International Rectifier |
Logo |
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Description |
35/40/and 60 Amp Power Silicon Rectifier Diodes |
Datasheet |
1N1190 Datasheet (PDF) |
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Part Number |
1N1190 |
Manufacturers |
GeneSiC |
Logo |
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Description |
Silicon Standard Recovery Diode |
Datasheet |
1N1190 Datasheet (PDF) |
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N1188 thru 1N1190R
VRRM = 400 V - 600 V IF = 35 A
AC
DO-5 Package
CA Stud Stud
(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N1188 (R)
1N1189 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 140 °C TC = .
Part Number |
1N1190 |
Manufacturers |
Diotec Semiconductor |
Logo |
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Description |
Silicon-Power Rectifiers |
Datasheet |
1N1190 Datasheet (PDF) |
1N 1183 ... 1N 1190, 1N 3766, 1N 3768 PBY 301 ... PBY 307 Silicon-Power Rectifiers Silizium-Leistungs-Gleichrichter
13 14
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgehäuse
37
35 A 50…1000 V DO-5 6g
Ø3.5 Type
Weight approx. – Gewicht ca.
SW17 M6
Standard polarity: Cathode to stud / am Gewinde Index R: Anode to stud / am Gewinde (e.g. 1N 1183 A/R) Standard packaging: bulk Standard Lieferform: lose im Karton
Dimensions / Maße in mm
Maximum ratings Type Typ 1N 1183 1N 1184 1N 1186 1N 1188 1N 1190 1N 3766 1N 3768 = = = = = = = PBY 301 PBY 302 PBY 303 PBY 304 PBY 305 PBY 306 PBY 307 Repetitive peak reverse voltage Perio.
Part Number |
1N1190 |
Manufacturers |
Naina Semiconductor |
Logo |
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Description |
Standard Recovery Diode |
Datasheet |
1N1190 Datasheet (PDF) |
Naina Semiconductor Ltd.
1N1187 thru 1N1190R
Standard Recovery Diode, 35A
Features
Glass passivated die Low forward voltage drop High surge capability Low leakage current Normal and Reverse polarity Metric and UNF threads available
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions Symbol 1N1187(R)
Repetitive peak reverse voltage
VRRM
300
RMS reverse voltage
VRMS
210
DC blocking voltage
VDC 300
Continuous forward current
TC ≤ 140oC
IF(AV)
35
Surge non-repetitive forward current, half-sine wave
TC = 25oC
IFSM 595
Maximum peak forward voltage
IF = 35 A, TJ = 25oC
VF
1.2
Reverse current
TJ = 25oC TJ = 140oC
IR
1.
Part Number |
1N1190 |
Manufacturers |
Microsemi |
Logo |
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Description |
Silicon Power Rectifier |
Datasheet |
1N1190 Datasheet (PDF) |
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Part Number |
1N1190 |
Manufacturers |
Digitron Semiconductors |
Logo |
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Description |
STANDARD RECOVERY RECTIFIERS |
Datasheet |
1N1190 Datasheet (PDF) |
1N1183-1N1190, 1N3765-1N3768
High-reliability discrete products and engineering services since 1977
STANDARD RECOVERY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Characteristics
Average forward current Maximum surge current Maximum I2t for fusing Maximum peak forward voltage Maximum peak reverse current Maximum peak reverse current Maximum thermal resistance Maximum recommended operating frequency Storage temperature range Operating junction temperature range
*Pulse test: Pulse width 300µsec. D.
35/40/and 60 Amp Power Silicon Rectifier Diodes
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2005-03-23 : 2N2857CSM 2N2880 2N2891 2N2894 2N2894 2N2894 2N2894A 2N2894ACSM 2N2894CSM 2N2894DCSM