Silicon Standard Recovery Diode
Features • High Surge Capability • Types up to 600 V VRRM • Not ESD Sensitive
Note: 1. S...
Silicon Standard Recovery Diode
Features High Surge Capability Types up to 600 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N1183A thru 1N1190AR
VRRM = 50 V - 600 V IF = 40 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183A(R) 1N1184A(R) 1N1186A(R) 1N1188A(R) 1N1190A(R) Unit
Repetitive peak reverse
voltage RMS reverse
voltage
DC blocking
voltage
Continuous forward current
VRRM
VRMS VDC IF
TC ≤ 150 °C
50
100
200
35
70
140
50
100
200
40
40
40
Surge non-repetitive forward current, Half Sine Wave
IF,SM TC = 25 °C, tp = 8.3 ms
800
800
800
400
600
V
280
420
V
400
600
V
40
40
A
800
800
A
Operating temperature
Tj
Storage temperature
Tstg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N1183A(R) 1N1184A(R) 1N1186A(R) 1N1188A(R) 1N1190A(R) Unit
Diode forward
voltage
VF
IF = 40 A, Tj = 25 °C
1.1
Reverse current
IR
VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 140 °C
10 15
Thermal characteristics
Thermal resistance, junction case
RthJC
1.25
1.1 10 15
1.25
1.1 10 15
1.25
1.1
1.1
V
10
10
μA
15
15
mA
1.25
1.25 °C/W
Feb 2016
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