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1N1206A Datasheet

Part Number 1N1206A
Manufacturers Vishay
Logo Vishay
Description Medium Power Silicon Rectifier Diodes
Datasheet 1N1206A Datasheet1N1206A Datasheet (PDF)

1N1...A, 1N36..A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V • High surge capability • Low thermal impedance RoHS COMPLIANT • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-203AA (DO-4) • RoHS compliant PRODUCT SUMMARY IF(AV) 12 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) IFSM I2t TC VRRM Note (1) JEDEC registered values .

  1N1206A   1N1206A






Part Number 1N1206A
Manufacturers ETC
Logo ETC
Description Silicon Rectifiers
Datasheet 1N1206A Datasheet1N1206A Datasheet (PDF)

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  1N1206A   1N1206A







Part Number 1N1206A
Manufacturers America Semiconductor
Logo America Semiconductor
Description Silicon Standard Recovery Diode
Datasheet 1N1206A Datasheet1N1206A Datasheet (PDF)

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

  1N1206A   1N1206A







Part Number 1N1206A
Manufacturers Diotec Semiconductor
Logo Diotec Semiconductor
Description Silicon-Power Rectifiers
Datasheet 1N1206A Datasheet1N1206A Datasheet (PDF)

1N 1199A ... 1N 1206A, 1N 3671, 1N 3673 PBY 271 ... PBY 277 Silicon-Power Rectifiers Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgehäuse Weight approx. – Gewicht ca. Recommended mounting torque Empfohlenes Anzugsdrehmoment Silizium-Leistungs-Gleichrichter 12 A 50...1000 V DO-4 5.5 g 18 ± 10% lb.in. 2 ± 10% Nm Dimensions / Maße in mm Standard: Cathode to stud / am Gewinde Index R: Anode to stud / am Gewinde (e.g. 1N 1199 A/R) .

  1N1206A   1N1206A







Part Number 1N1206A
Manufacturers International Rectifier
Logo International Rectifier
Description MEDIUM POWER SILICON RECTIFIER DIODES
Datasheet 1N1206A Datasheet1N1206A Datasheet (PDF)

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  1N1206A   1N1206A







Part Number 1N1206A
Manufacturers Digitron Semiconductors
Logo Digitron Semiconductors
Description SILICON POWER RECTIFIER
Datasheet 1N1206A Datasheet1N1206A Datasheet (PDF)

1N1199(A,B)-1N1206(A,B) High-reliability discrete products and engineering services since 1977 SILICON POWER RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Symbol Peak reverse voltage Operating & storage temperature range VR TJ, Tstg Maximum thermal resistance RθJC Mounting torque Wei.

  1N1206A   1N1206A







Medium Power Silicon Rectifier Diodes

1N1...A, 1N36..A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V • High surge capability • Low thermal impedance RoHS COMPLIANT • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-203AA (DO-4) • RoHS compliant PRODUCT SUMMARY IF(AV) 12 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) IFSM I2t TC VRRM Note (1) JEDEC registered values TC 50 Hz 60 Hz 50 Hz 60 Hz Range ELECTRICAL SPECIFICATIONS VALUES 12 (1) 150 (1) 230 240 (1) 260 240 - 65 to 200 50 to 1000 (1) VOLTAGE RATINGS TYPE NUMBER (2) VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VR(RMS), MAXIMUM RMS REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1N1199A TC = - 65 °C TO 200 °C 50 (1) TC = - 65 °C TO 200 °C 35 (1) TC = - 65 °C TO 200 °C 100 (1) 1N1200A 100 (1) 70 (1) 200 (1) 1N1201A 150 (1) 105 (1) 300 (1) .


2017-06-06 : CS8353C    1N1200A    1N1201A    1N1202A    1N1203A    1N1204A    1N1205A    DM74ALS158    DM74ALS162B    DM74ALS163B   


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