1N2169A

1N2163 thru 1N2171 (SILICON) lN2163A thru lN2171A lN3580, A, Bthru lN3583, A, B TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES Highly reliable reference sources utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case. Low Dynamic Impedance Choice of Three Temperature Ranges "Box Method" Specifications Guarantee Maximum Voltage De- viation. Temperature compensated reference diodes are made by taking advantage of the differing thermal characteristics of forward and reverse biased silicon PN junctions. A forward biased junction has a negative temperature coefficient of approximately 2.0 millivoltsfC. Reverse biased junctions above 5.0 volts have a positive temperature coefficient and therefore it is possible by judicious selection of combinations of forward and reverse biased junctions to obtain a device that shows a very low temperature coefficient due to cancellation. Because of the dif...