1N2624B

lN2620, A, B(SILICON) thru lN2624, A, B Temperature-compensated zener reference diodes utilizing an oxide-passivated junction for long-term voltage stability. Construction consists of welded hermetically sealed metal and glass case. MAXIMUM RATINGS Junction Temperature: -55 to+1750C Storage Temperature: -65 to +1750C DC Power Dissipation: 750 mW @ TA = 250C MECHAN ICAL CHARACTE RISTICS CASE: Hermetically sealed, welded metal and glass DIMENSIONS: See outline drawing. FI NISH: All external surfaces are corrosion resistant and leads are readily sold· erable and weldable. POLARITY: Cathode to case WEIGHT: 1.5 Grams (approx) MOUNTING POSITION: Any =ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise noted) JEDEC Type No. Maximum Voltage Change AVZ (Volts) (Note 1) Ambient Test Tem~rature °c ±loC Temperature Coefficient %rC (Note 1) Vz = 9.3 V ±5.0%* @ IZT = 10 rnA 1N2620 1N2621 1N2622 1N2623 1N2624 1N2620A 1N2621A 1N2622A 1N2623A 1N2624A 1N2620B 1N2621B 1N2622B 1N2623B 1N26...