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1N4002G Datasheet

Part Number 1N4002G
Manufacturers NXP
Logo NXP
Description Rectifiers
Datasheet 1N4002G Datasheet1N4002G Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N4001G to 1N4007G Rectifiers Product specification Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product specification Rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack. DESCRIPTION 1N4001G to 1N4007G This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Rugg.

  1N4002G   1N4002G






Part Number 1N4002G
Manufacturers WON-TOP
Logo WON-TOP
Description 1.0A GLASS PASSIVATED STANDARD DIODE
Datasheet 1N4002G Datasheet1N4002G Datasheet (PDF)

® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capability 1N4001G – 1N4007G 1.0A GLASS PASSIVATED STANDARD DIODE Pb AB A Mechanical Data  Case: DO-41, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: Cathode Band  Weight: 0.35 grams (approx.)  Mounting Position: Any  Marking: Type Number  Lead Free: For RoHS / Lead Free Version, Add .

  1N4002G   1N4002G







Part Number 1N4002G
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Glass Passivated Rectifiers
Datasheet 1N4002G Datasheet1N4002G Datasheet (PDF)

CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition 1N4001G thru 1N4007G Taiwan Semiconductor MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix .

  1N4002G   1N4002G







Part Number 1N4002G
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description 1.0A GLASS PASSIVATED RECTIFIER
Datasheet 1N4002G Datasheet1N4002G Datasheet (PDF)

SPICE MODELS: 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G 1N4001GL 1N4002GL 1N4003GL 1N4004GL 1N4005GL 1N4006GL 1N4007GL 1N4001G/L - 1N4007G/L 1.0A GLASS PASSIVATED RECTIFIER Features · · · · Glass Passivated Die Construction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Lead Free Finish, RoHS Compliant (Note 4) A B A Mechanical Data · · · · · · · · Case: DO-41 Plastic, A-405 Case Material: Molded Plastic. UL Flammability Classification R.

  1N4002G   1N4002G







Rectifiers

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N4001G to 1N4007G Rectifiers Product specification Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product specification Rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack. DESCRIPTION 1N4001G to 1N4007G This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Rugged glass package, using a high temperature alloyed construction. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G VR continuous reverse voltage 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G IF(AV) average forward current PARAMETER repetitive peak reverse voltage  a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. − − − − − − − − − − − − − − MAX. 50 100 200 400 600 800 1000 50 100 200 400 600 800 1000 V V V V V V V V V V V V V V UNIT averaged over any 20 ms period; Tamb = 75 °C; see Fig.2 averaged over any 20 ms period; Tamb = 100 °C; see Fig.2 − − − − − −65 −65 1.00 A 0.75 A 1.00 A 10 30 +175 +175 A A °C °C IF IFRM IFSM Tstg Tj continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature Tamb = 75 °C; see Fig.2 half sinewave; 60 Hz 1996 May 24 .


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