1N4001/L - 1N4007/L
1.0A RECTIFIER
POWER SEMICONDUCTOR
Features
• • • • • Diffused Junction High Current Capability and...
1N4001/L - 1N4007/L
1.0A RECTIFIER
POWER SEMICONDUCTOR
Features
Diffused Junction High Current Capability and Low Forward
Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material: UL Flammability Classification Rating 94V-0
A
B
A
C
D
Mechanical Data
Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: DO-41 0.30 grams (approx) A-405 0.20 grams (approx) Mounting Position: Any Marking: Type Number
Dim A B C D
DO-41 Plastic Min 25.40 4.06 0.71 2.00 Max 5.21 0.864 2.72
A-405 Min 25.40 4.10 0.53 2.00 Max 5.20 0.64 2.70
All Dimensions in mm “L” Suffix Designates A-405 Package No Suffix Designates DO-41 Package @ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage RMS Reverse
Voltage Average Rectified Output Current (Note 1) @ TA = 75°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward
Voltage Peak Reverse Current at Rated DC Blocking
Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient Maximum DC Blocking
Voltage Temperature Operating and Storage Temperature Range (Note 3) @ IF = 1.0A @ TA = 25°C @ TA = 100°C
1N 1N...