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1N4446 Datasheet

Part Number 1N4446
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Small Signal Diode
Datasheet 1N4446 Datasheet1N4446 Datasheet (PDF)

1N4446 1N4446 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value VRRM Maximum Repetitive Reverse Voltage 100 IF(AV) Average Rectified Forward Current 200 IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 Tstg Storage Temperature Range TJ Operating Junction Temperature -65 to +200 175 *These ratings are limiting values above which the se.

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Part Number 1N4446
Manufacturers Philips
Logo Philips
Description High-speed diodes
Datasheet 1N4446 Datasheet1N4446 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4446; 1N4448 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 15 Philips Semiconductors High-speed diodes Product specification 1N4148; 1N4446; 1N4448 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V • Repetitive pe.

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Part Number 1N4446
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON SWITCHING DIODE
Datasheet 1N4446 Datasheet1N4446 Datasheet (PDF)

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

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Part Number 1N4446
Manufacturers NTE
Logo NTE
Description Small Signal Diode
Datasheet 1N4446 Datasheet1N4446 Datasheet (PDF)

1N4446 Small Signal Diode Features: D DO−35 Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Max. Repetitive Reverse Voltage,VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Average Rectified Forward Current, IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . .

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Part Number 1N4446
Manufacturers Digitron Semiconductors
Logo Digitron Semiconductors
Description SWITCHING RECTIFIERS
Datasheet 1N4446 Datasheet1N4446 Datasheet (PDF)

1N4149, 1N4151-1N4154, 1N4446-1N4449 High-reliability discrete products and engineering services since 1977 SWITCHING RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Peak reverse voltage Average rectified current Forward surge current, 8.3ms Operating junction temperature range Storage tempe.

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Small Signal Diode

1N4446 1N4446 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value VRRM Maximum Repetitive Reverse Voltage 100 IF(AV) Average Rectified Forward Current 200 IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 Tstg Storage Temperature Range TJ Operating Junction Temperature -65 to +200 175 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA Parameter Power Dissipation Thermal Resistance, Junction to Ambient Value 500 300 Units V mA A A °C °C Units mW °C/W Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions VR Breakdown Voltage VF Forward Voltage IR Reverse Current CT Total Capacitance trr Reverse Recovery Time IR = 100 µA IF = 20 mA VR = 20 V VR = 20 V, TA = 150°C VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6 V, RL = 100 Ω, Irr = 1.0 mA Min 100 Max 1.0 25 50 4 4 Units V V nA µA pF ns 2003 Fairchild Semiconductor Corporation 1N4446, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is.


2016-04-14 : 1N3070    1N3595    1N4444    1N4446    1N4447    1N4449    1N4446    1N4446    1N4448    1N4447   


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