1N4448M

DATA SHEET SEMICONDUCTOR 500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes 1N4448M AXIAL LEAD DO34 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 500 mW TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature +175 °C WIV Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current 450 mA IFSURGE Peak Forward Surge Current 2A These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Fast Switching Device (TRR <4.0 nS) DO-34 Package (JEDEC DO-204) Through-Hole Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All external surfaces are corrosion resistant and leads are readily solderable Cathode indicated by polarity band xxxx DEVICE MARKING DIAGRAM (1N4448M) Device Code : 1NxxxxM Cathode Anode ELECTRICAL SYMBOL Electrical Cha...