DatasheetsPDF.com

1N4448WT

JCET

FAST SWITCHING DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1N4448WT FAST SWITCHING DIODE FEA...


JCET

1N4448WT

File Download Download 1N4448WT Datasheet


Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1N4448WT FAST SWITCHING DIODE FEATURES  Small Package  Low Reverse Current  Fast Switching Speed  Surface Mount Package Ideally Suited for Automatic Insertion MARKING: T5 SOD-523 T5 The marking bar indicates the cathode Solid dot = Green molding compound device, if none,the normal device. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RθJA Tj TSTG 100 75 53 500 250 2.0 150 833 150 -55~+150 Unit V V V mA mA A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse voltage Reverse current Symbol V(BR)1 V(BR)2 IR Test conditions IR=5μA IR=100μA VR =75V VR=20V IF=5mA Forward voltage IF=10mA VF IF=100mA IF=150mA Total capacitance Ctot VR=0V,f=1MHz Reverse recovery time trr IF= IR =10mA, Irr=0.1*IR,RL=100Ω www.cj-elec.com 1 Min Typ Max Unit 75 V 100 V 1 µA 25 nA 0.715 V 0.855 V 1V 1.25 V 4 pF 4 ns C,Mar,2015 FORWARD CURRENT I (mA) F REVERSE CURRENT I (nA) R Typical Characterist...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)