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1N5194UR Datasheet

Part Number 1N5194UR
Manufacturers Compensated Deuices Incorporated
Logo Compensated Deuices Incorporated
Description GENERAL PURPOSE SILICON DIODES
Datasheet 1N5194UR Datasheet1N5194UR Datasheet (PDF)

• AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current: 650mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified VRM TYPE V(pk) CDLL, 1N5194UR CDLL, 1N5195UR CDLL, 1N519.

  1N5194UR   1N5194UR






Part Number 1N5194UR
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description LL-35 High Voltage / Current Low Leakage Glass Diodes
Datasheet 1N5194UR Datasheet1N5194UR Datasheet (PDF)

LL-35 High Voltage / Current Use Advantages 1N5194UR thru 1N5196UR Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic. Ideal for use in (Medical, Military and Aero/Space). Features Six Sigma quality Humidity proof glass Metallurgically bonded Thermally matched system No thermal fatigue High surge capability Sigma Bond™ plated cont.

  1N5194UR   1N5194UR







GENERAL PURPOSE SILICON DIODES

• AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED 1N5194UR 1N5195UR 1N5196UR CDLL5194 CDLL5195 CDLL5196 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current: 650mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified VRM TYPE V(pk) CDLL, 1N5194UR CDLL, 1N5195UR CDLL, 1N5196UR 80 180 250 V(pk) 70 180 225 mA 200 200 200 VRWM IO IO TA = +150°C mA 50 50 50 I FSM TP=1/120 S TA=25ºC A 2 2 2 DIM D F G G1 S MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN. FIGURE 1 DESIGN DATA TYPE VF @100mA V dc CDLL, 1N5194UR CDLL, 1N5195UR CDLL, 1N5196UR 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 IR1 at VRWM IR2 at VRM TA=25ºC IR3 at VRWM TA = 150°C CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 ˚C/W maximum THERMAL IMPEDANCE: (ZOJX): 70 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITION: Any. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. nA dc 25 25 25 µA 100 100 100 µA dc 5 5 5 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781.


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