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1N5383B DIODES Datasheet PDFSILICON ZENER DIODES SILICON ZENER DIODES |
Part Number | 1N5383B |
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Description | SILICON ZENER DIODES |
Feature | TH97/2478
TH09/2479
IATF 0113686 SGS T H07/1033
1N5338B - 1N5388B
SILICON ZE NER DIODES
VZ : 5. 1 - 200 Volts PD : 5 Watts FEATURES : * Complete Voltage Ra nge 5. 1 to 200 Volts * High peak revers e power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA : * Case : DO-15 Molded plastic * Epoxy : UL94V-0 rate flame r etardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathod e end * Mounting position : Any * Weigh t : 0. 4 gram DO-15 0. 142 (3. 6) 0. 102 (2. 6) 0. 034 (0. 86) 0. 028 (0. 71) 1. 00 ( 25. 4) MIN. 0. 3 . |
Manufacture | EIC |
Datasheet |
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Part Number | 1N5383B |
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Description | ZENER DIODE |
Feature | BL GALAXY ELECTRICAL
ZENER DIODES
1N533 3B - - - 1N5388B
POWER DISSIPATION: 5. 0 W FEATURES Silicon planar power zener diodes For use in stabilizing and clip ping curcuits with high power rating. S tandard zener voltage tolerance is ±10 %. Add suffix "B" for ±5% tolerance. o ther zener voltage and tolerances are a vailable upon request. MECHANICAL DATA Case:DO-27S Terminals: solderable per M IL-STD-202, method 208 Polarity: cathod e Band Marking: type number Approx. wei ght: 0. 032 ounces, 0. 9 grams DO - 27S Dimensions in millimeters MAXIMUM RAT INGS AND ELECTRICAL CHARACTERISTICS Rat ings at 25 ambie . |
Manufacture | GME |
Datasheet |
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Part Number | 1N5383B |
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Description | Zener Diode |
Feature | 1N53xxB
1. 0 (25. 4) MIN. . 052 (1. 3) DIA . . 048 (1. 2) 5W Zener Diode . 375 (9. 5 ) . 335 (8. 5) 1. 0 (25. 4) MIN. . 220 (5. 6 ) DIA. . 197 (5. 0) Ordering Information Part Number Compound 1N53xxB Gener al 1N53xxB-H Halogen Free DO-201AD D imensions in inches and (millimeters) Features ‧Glass passivated chip ‧Lo w leakage ‧Built-in strain relief ‧ Low inductance ‧High peak reverse pow er dissipat ‧For use in stabilizing a nd clipping circuits with high power ra ting Absolute Maximum Ratings Paramete r DC Power Dissipation at TL = 75 °C ( Note1) Maximum Forward Voltage at IF = 1 A. Junction Temperature R . |
Manufacture | Eris |
Datasheet |
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