1N5550US THRU 1N5554US Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode
POWER DISCRETES Description
Q...
1N5550US THRU 1N5554US Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode
POWER DISCRETES Description
Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V
Features
Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal shock resistance Low forward
voltage drop Avalanche capability These products are qualified to MIL-PRF-19500/420. They can be supplied fully released as JAN, JANTX, and JANTXV versions.
Absolute Maximum Ratings
Electrical specifications @ TA = 25°C unless otherwise specified.
Symbol Working Reverse
Voltage Average Forward Current @ 55 °C in free air, lead length 0.375" Repetitive Surge Current @ 55 °C in free air, lead length 0.375" Non-Repetitive Surge Current (tp = 8.3mS @ VR & TJMAX) (tp = 8.3mS, @ VR & 25 °C) Storage Temperature Range VRWM IF(AV)
1N 5550U S 1N 5551U S 1N 5552U S 1N 5553U S
1N 5554U S
Units V A
200
400
600 5.0
800
1000
www.DataSheet.co.kr
IFRM
25
A
IFSM TSTG
100 150 -65 to +175
A °C
Revision: August 22nd, 2011
1
www.semtech.com
Datasheet pdf - http://www.DataSheet4U.net/
1N5550US THRU 1N5554US
POWER DISCRETES Electrical Specifications
Symbol 1N5550US 1N5551US 1N5552US Average Forward Current (sine wave) - max. TA = 55 °C - max. L = 3/8"; TL = 55 °C I2t for fusing (t = 8.3mS) max Forward
Voltage Drop max. @ IF = 3.0A, Tj= 25 °C Reverse Current max. @ VRWM, Tj = 25°C @ VRWM, Tj = 125°C Reverse Recovery Time max. 0.5A IF to 1.0A IRM recovers to 0.25A IRM(REC) Junct...