DIODE. 1N5822 Datasheet

1N5822 Datasheet PDF

Part 1N5822
Description 3.0A SCHOTTKY BARRIER DIODE
Feature ® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection.
Manufacture WON-TOP
Datasheet
Download 1N5822 Datasheet

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1N5822 Datasheet




1N5822
®
WON-TOP ELECTRONICS
Features
Schottky Barrier Chip
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 80A Peak
Low Power Loss, High Efficiency
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
Mechanical Data
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
1N5820 – 1N5822
3.0A SCHOTTKY BARRIER DIODE
Pb
ABA
D
DO-201AD
Dim Min Max
A 25.4 —
B 7.20 9.50
C 1.20 1.30
D 4.80 5.30
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @TL = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
@IF = 3.0A
@IF = 9.4A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
Thermal Resistance, Junction to Ambient (Note 2)
Thermal Resistance, Junction to Lead (Note 2)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
R JA
R JL
TJ
TSTG
1N5820
20
14
0.475
0.850
1N5821
30
21
3.0
80
0.500
0.900
2.0
20
28
10
-65 to +125
-65 to +150
1N5822
40
28
0.525
0.950
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Vertical PCB mounting with 12.7mm lead length on 63.5 x 63.5mm copper pad.
Unit
V
V
A
A
V
mA
°C/W
°C
°C
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1



1N5822
1N5820 – 1N5822
3.0
100
®
WON-TOP ELECTRONICS
2.4
1.8
1.2
0.6
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
100
Single Half-Sine-Wave
JEDEC Method
80
10
TJ = 125°C
TJ = 25°C
1.0
0.1
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
10 TA = 125°C
60 1.0
TA = 75°C
40 0.1
TA = 25°C
20 0.01
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
1000
800
0.001
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
f = 1MHz
600
400
200
www.wontop.com
2
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012




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