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1N5825 Datasheet

Part Number 1N5825
Manufacturers SunMate
Logo SunMate
Description SCHOTTKY BARRIER RECTIFIER DIODE
Datasheet 1N5825 Datasheet1N5825 Datasheet (PDF)

1N5823 - 1N5825 SCHOTTKY BARRIER RECTIFIER DIODE VOLTAGE RANGE: 20 - 40V CURRENT: 5.0 A Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability ! Low Power Loss, High Efficiency ! High Surge Current Capability AB ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity       P ro tection App lica tio n s                                       .

  1N5825   1N5825






Part Number 1N5825
Manufacturers Microsemi
Logo Microsemi
Description 5Amp Schottky Rectifier
Datasheet 1N5825 Datasheet1N5825 Datasheet (PDF)

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  1N5825   1N5825







Part Number 1N5825
Manufacturers Motorola
Logo Motorola
Description POWER RECTIFIERS
Datasheet 1N5825 Datasheet1N5825 Datasheet (PDF)

® MOTOROLA IN5823,lN5824 IN5825 MBRS82S,H, H1 Designers Data Sheet HOT CARRIER POWER RECTIFIERS · .. employing the Schottky Barrier principle in a large area metal- to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes. • Extremely Low vF • High Surge Capacity • Low Stored Charg.

  1N5825   1N5825







Part Number 1N5825
Manufacturers ETC
Logo ETC
Description HOT CARRIER POWER RECTIFIERS
Datasheet 1N5825 Datasheet1N5825 Datasheet (PDF)

lN5823, lN5824, lN5825 (SILICON) Designers Data Sheet HOT CARRIER POWER RECTIFIERS emploYing the Schottky Barner pnnclple In a large area metaHo-slllcon power diode State of the art geometry features epitaxial construction with oXide passivation and metal overlap contact Ideally sUited for use as rectifiers In [ow-voltage, high-frequency Inverters, free wheeling diodes, and polarity protection diodes • Extremely Low vF • Low Stored Charge, MaJonty Carner Conduction • Low Power Loss/High Eff.

  1N5825   1N5825







Part Number 1N5825
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Axial Lead Rectifiers
Datasheet 1N5825 Datasheet1N5825 Datasheet (PDF)

1N5823 ,1N5824 ,1N5825 1N5823 and 1N5825 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Extremely Low VF • Low Power Loss/High Effic.

  1N5825   1N5825







SCHOTTKY BARRIER RECTIFIER DIODE

1N5823 - 1N5825 SCHOTTKY BARRIER RECTIFIER DIODE VOLTAGE RANGE: 20 - 40V CURRENT: 5.0 A Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability ! Low Power Loss, High Efficiency ! High Surge Current Capability AB ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity       P ro tection App lica tio n s                                                       Mechanical Data A D ! Case: DO-201AD, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number DO-201AD Dim Min Max A 25.40 — B 8.50 9.53 C 0.96 1.06 D 4.80 5.21 All Dimensions in mm C Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 100°C (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @IF = 5.0A Peak Reverse Current At Rated DC Blocking Voltage @TA = 25°C @TA = 100°C Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note .


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