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1PS59SB10

NXP

Schottky barrier (double) diodes

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D114 1PS59SB10 series Schottky barrier (double) diodes Product spe...


NXP

1PS59SB10

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D114 1PS59SB10 series Schottky barrier (double) diodes Product specification 1996 Sep 20 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES Low forward voltage Guard ring protected Small SMD package. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. DESCRIPTION page 1PS59SB10 series PINNING 1PS59SB. . PIN 10 1 2 3 a n.c. k 14 a1 k2 k1, a2 15 a1 a2 k1, k2 16 k1 k2 a1, a2 Fig.3 3 3 1 2 MLC358 1PS59SB14 diode configuration (symbol). 3 Planar Schottky barrier diodes encapsulated in a SC59 small plastic SMD package. Single diodes and double diodes with different pinning are available. MARKING TYPE NUMBER 1PS59SB10 1PS59SB14 1PS59SB15 1PS59SB16 MARKING CODE 10 14 15 16 1 Top view 2 MSA314 1 2 MLC359 Fig.1 Simplified outline (SC59) and pin configuration. Fig.4 1PS59SB15 diode configuration (symbol). 3 1 2 n.c. MLC357 3 1 2 MLC360 Fig.2 1PS59SB10 single diode configuration (symbol). Fig.5 1PS59SB16 diode configuration (symbol). 1996 Sep 20 2 Philips Semiconductors Product specification Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFRM IFSM Ptot Tstg Tj continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temper...




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