1PS59SB20

DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode FEATURES Ultra fast switching speed Low forward voltage Guard ring protected Small SMD package. dbook, halfpage 1PS59SB20 DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in an SC-59 small SMD plastic package. APPLICATIONS High-speed switching Voltage clamping Protection circuits. 1 3 3 1 2 n.c. MLC357 2 MSA314 PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode Top view Marking code: 20. Fig.1 Simplified outline (SC-59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFSM Tstg Tj PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current storage temperature junction temperature − − − −65 − MIN. 40 500 2 +150 125 MAX. V mA A °C °C UNIT 1998 Jul 28 2 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS IF = 500 mA; see Fig.2 VR = 35 V; see Fig.3 VR = 35 V; Tj = 100 °C; see Fig.3 f = 1 MHz; VR = 0; see Fig.4 − − − 60 MIN. 1PS59SB20 MAX. 550 100 10 90 UNIT mV µA mA pF THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-59 standard mounting condition...