1PS59SB21

DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB21 Schottky barrier diode Product specification Supersedes data of 1998 Jul 28 1999 May 05 Philips Semiconductors Product specification Schottky barrier diode FEATURES Ultra fast switching speed Low forward voltage Guard ring protected Small SMD package. APPLICATIONS High-speed switching Voltage clamping Protection circuits. 1 handbook, halfpage 1PS59SB21 DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in an SC-59 small plastic SMD package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode 3 3 2 n.c. MLC357 1 Top view Marking code: 21. 2 MSA314 Fig.1 Simplified outline (SC-59) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFSM Tstg Tj PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current storage temperature junction temperature − − − −65 − MIN. 40 200 1 +150 125 MAX. V mA A °C °C UNIT 1999 May 05 2 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.2 IF = 10 mA IF = 100 mA IF = 200 mA IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SC-59 standard mounting conditions. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 reverse current diode ...