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1PS70SB16

NXP

Dual Schottky barrier diode

1PS70SB16 Dual Schottky barrier diode 17 December 2012 Product data sheet 1. General description Dual Planar Schottky ...


NXP

1PS70SB16

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Description
1PS70SB16 Dual Schottky barrier diode 17 December 2012 Product data sheet 1. General description Dual Planar Schottky barrier diode in common anode configuration with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) SurfaceMounted Device (SMD) plastic package. 2. Features and benefits Low forward voltage Low capacitance AEC-Q101 qualified 3. Applications Ultra high-speed switching Line termination Voltage clamping Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IF forward current VR reverse voltage Per diode VF forward voltage Conditions IF = 10 mA; Tamb = 25 °C Min Typ Max Unit - - 200 mA - - 30 V - - 400 mV Scan or click this QR code to view the latest information for this product NXP Semiconductors 1PS70SB16 Dual Schottky barrier diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) 3 A1, A2 common anode Simplified outline 3 12 SC-70 (SOT323) Graphic symbol A1, A2 K1 K2 aaa-004974 6. Ordering information Table 3. Ordering information Type number Package Name 1PS70SB16 SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 7. Marking Table 4. Marking codes Type number 1PS70SB16 Marking code [1] 7%6 [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rati...




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