1PT

SEMICONDUCTOR 1PT Series RRooHHSS Sensitive gate SCRs, 1A Main Features Symbol IT(RMS) VDRM/VRRM IGT DESCRIPTION Value 1 600 to 800 10 to 200 Unit A V µA Thanks to highly sensitive triggering levels, the 1PT series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies among others. Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area. TO-92 (1PTxxE) A G K 3(A) 2(G) 1(K) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Forward peak gate power Average gate power dissipation Repetitive peak off-state voltage Repetitive peak reverse voltage Storage temperature range Operating junction temperature range SYMBOL IT(RMS) TEST CONDITIONS Tc =85ºC VALUE 1 UNIT A IT(AV) ITSM I2t dI/dt IGM PGM PG(AV) VDRM VRRM Tstg Tj Tc =85ºC F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms tp = 10 ms F = 60 Hz Tj = 110ºC Tp = 20 µs Tj = 110ºC TA=25°C, Pulse width≤0.1µs Tj =110ºC Tj =25ºC 0.6 12 13 0.72 50 0.5 0.5 0.1 600 and 800 - 40 to + 150 - 40 to + 110 A A A2s A/µs A W W V ºC www.nellsemi.com Page 1 of 4 ...