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1R5GZ41

Toshiba Semiconductor

Silicon Rectifier

1R5BZ41,1R5GZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5BZ41, 1R5GZ41 General Purpose Rectifier Applications • Avera...


Toshiba Semiconductor

1R5GZ41

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1R5BZ41,1R5GZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5BZ41, 1R5GZ41 General Purpose Rectifier Applications Average Forward Current: IF (AV) = 1.5 A (Ta = 35°C) Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V Peak One Cycle Surge Forward Current (non repetitive): IFSM = 150 A Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage 1R5BZ41 1R5GZ41 Average forward current (Ta = 35°C) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range Symbol VRRM IF (AV) IFSM Tj Tstg Rating 100 400 1.5 150 (50 Hz) 165 (60 Hz) −40 to 150 −40 to 150 Unit V A A °C °C Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Thermal resistance (junction to ambient) Symbol VFM IRRM Rth (j-a) Test Condition IFM = 0.5 A VRRM = Rated DC JEDEC ― JEITA ― TOSHIBA 3-4B1A Weight: 0.47 g (typ.) Min Typ. Max Unit ― ― 0.95 V ― ― 10 µA ― ― 90 °C /W 1R 5G Marking Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Abbreviation Code 1R5B 1R5G Part No. 1R5BZ41 1R5GZ41 1 2004-07-07 1R5BZ41,1R5GZ41 Handling Precaution The maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: We recommend th...




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