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1R5JZ41

Toshiba Semiconductor

Silicon Rectifier

1R5JZ41,1R5NZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5JZ41,1R5NZ41 General Purpose Rectifier Applications · Avera...


Toshiba Semiconductor

1R5JZ41

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1R5JZ41,1R5NZ41 TOSHIBA Rectifier Silicon Diffused Type 1R5JZ41,1R5NZ41 General Purpose Rectifier Applications · Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) · Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V · Peak One Cycle Surge Forward Current (non repetitive): IFSM = 100 A · Plastic Mold Type. Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage 1R5JZ41 1R5NZ41 Average forward current (Ta = 25°C) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.5 100 (50 Hz) 110 (60 Hz) -40~150 -40~150 Unit V A A °C °C Unit: mm JEDEC ― JEITA ― TOSHIBA 3-4B1A Weight: 0.47 g (typ.) 1 2001-11-14 1R5JZ41,1R5NZ41 Electrical Characteristics (Ta = 25°C) Characteristics Peak forward voltage Repetitive peak reverse current Thermal resistance (junction to ambient) Note1: Thermal resistance 10 mm 10 mm Symbol VFM IRRM Rth (j-a) Test Condition IFM = 1.5 A VRRM = Rated DC Min ¾ ¾ (Note1) ¾ Typ. Max Unit ¾ 1.0 V ¾ 10 mA ¾ 90 °C/W 5 mm ´ 5 mm 15 mm Marking 1R 5J Type Code Lot No. Code Type 1R5J 1R5N 1R5JZ41 1R5NZ41 Month (starting from alphabet A) Cathode Mark Color: Silver Year (last number of the christian era) 2 2001-11-14 Instantaneous forward current iF (A) 20 10 5.0 3.0 Tj = 150°C 1.0 0.5 0.3 iF – vF 25°C 0.1 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous forward voltage vF (V) 1.6 Average forward power dissipation PF ...




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