VOLTAGE RANGE: 1000V CURRENT: 1.0 A
Features
! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability ! ...
VOLTAGE RANGE: 1000V CURRENT: 1.0 A
Features
! Diffused Junction ! Low Forward
Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability
Mechanical Data
! Case: D O - 1 5 ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.40 grams (approx.) ! Mounting Position: Any ! Marking: Type Number
1S1830
AXIAL LEADED SILICON RECTIFIER DIODES
ABA
D
DO-15
Dim Min Max
A 25.40 —
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum Recurrent Peak Reverse
Voltage Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 50 °C
Peak Forward Surge Current, 8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward
Voltage at IF = 1.5 Amps.
Repetitive Peak Reverse
Current Storage Temperature Range
Tj = 150 °C
Junction Temperature Range
Thermal Resistance (Junction to Ambient) DC
SYMBOL VRRM
IF(AV)
IFSM
VF IRRM(1) IRRM(2) Tstg TJ Rth(j-a)
1S1830 1000
1.0
45
1.2 10 400 - 40 to + 150 - 40 to + 150 100
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse
voltage of 4.0 VDC
UNIT V
A
A
V µA µA C °C °C/W
1 of 2
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2 of 2
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