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1S2074H

Hitachi Semiconductor

Silicon Diode

1S2074(H) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-142A (Z) Rev. 1 Aug. 1995 Features • Low capa...


Hitachi Semiconductor

1S2074H

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1S2074(H) Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-142A (Z) Rev. 1 Aug. 1995 Features Low capacitance. (C = 3.0pF max) Short reverse recovery time. (trr = 4.0ns max) High reliability with glass seal. Ordering Information Type No. 1S2074(H) Cathode Green 2nd band White Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1S2074(H) Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM * IO Pd Tj Tstg Value 50 45 450 600 150 250 175 –65 to +175 Unit V V mA mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr* Min 0.64 — — — Typ — — — — Max 0.8 0.1 3.0 4.0 Unit V µA pF ns Test Condition I F = 10mA VR = 30V VR = 1V, f = 1MHz I F = IR = 10mA, Irr = 1mA Note: Reverse recovery time test circuit DC Supply 0.1µF 3kΩ Sampling Rin = 50Ω Oscilloscope Ro = 50Ω Pulse Generator Trigger 2 1S2074(H) 10 –1 Forward current I F (A) 10 –3 10 –4 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) Ta = 125 °C Ta = 75°C Ta = 25°C Ta = –25° C 10 –2 1.2 Fig.1 Forward current Vs. Forward voltage –4 10 Ta = 125°C 10 Reverse current I R (A) –5 Ta = 75°C 10 –6 10 –7 Ta = 25°C 10 –8 10 –9 0 30 10 20...




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