Small Signal Product
1SS133M
Taiwan Semiconductor
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast s...
Small Signal Product
1SS133M
Taiwan Semiconductor
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (trr < 4.0 ns) - Through-hole mount device type - DO-34 package (JEDEC DO-204) - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant
and leads are readily solderable - RoHS compliant - Solder hot dip Tin (Sn) lead finish - Cathode indicated by polarity band - Marking code: 133
DO-34
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 300
Working Inverse
Voltage
WIV 90
Average Rectified Current
IO 150
Non-Repetitive Peak Forward Current Peak Forward Surge Current
IFM IFSURGE
450 2
Operating Junction Temperature
TJ + 175
Storage Temperature Range
TSTG
-65 to +200
UNIT mW
V mA mA A oC oC
PARAMETER
SYMBOL
Breakdown
Voltage Forward
Voltage Reverse Leakage Current Junction Capacitance
IR=500nA IF=100mA VR=80V VR=0, f=1.0MHz
BV VF IR Cj
Reverse Recovery Time
(Note 1)
trr
Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA
MIN 80
---
MAX -1.2
500 4.0 4.0
UNIT V V
nA pF ns
Document Number: DS_S1403003
Version: C15
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig. 1 Forward Characteristics 100
Forward Current : IF (mA)
10 TA=125oC TA=75oC
1 TA=25oC TA=-25oC
0.1 0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward
Voltage : VF (V)
Capaci...