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1SS387

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications 1SS387 Unit: mm z Compact 2-pin package – ideal for high-density mounting z Low forward voltage : VF (3) = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characte...



Toshiba Semiconductor

1SS387

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