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1SS391 Diode Datasheet PDF

Silicon Diode

Silicon Diode

 

 

 

Part Number 1SS391
Description Silicon Diode
Feature TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 1SS391 Low Volta ge High Speed Switching z Low forward voltage z Small package : VF (2) = 0.
2 3V (typ.
) @IF = 5mA : SC-61 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit M aximum (peak) reverse Voltage Reverse v oltage Maximum (peak) forward current A verage forward current Surge current (1 0ms) Power dissipation Junction tempera ture Storage temperature range Operatin g temperature range VRM VR IFM IO IFSM P Tj Tstg Topr 15 10 200 * 100 * 1* 1 50 * 125 −55 to 125 −40 to 100 V V mA mA A mW °C °C ° .
Manufacture Toshiba Semiconductor
Datasheet
Download 1SS391 Datasheet

1SS391

 

 

 


 

 

 

Part Number 1SS391
Description Silicon Diode
Feature TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 1SS391 Low Volta ge High Speed Switching z Low forward voltage z Small package : VF (2) = 0.
2 3V (typ.
) @IF = 5mA : SC-61 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit M aximum (peak) reverse Voltage Reverse v oltage Maximum (peak) forward current A verage forward current Surge current (1 0ms) Power dissipation Junction tempera ture Storage temperature range Operatin g temperature range VRM VR IFM IO IFSM P Tj Tstg Topr 15 10 200 * 100 * 1* 1 50 * 125 −55 to 125 −40 to 100 V V mA mA A mW °C °C ° .
Manufacture Toshiba Semiconductor
Datasheet
Download 1SS391 Datasheet

1SS391

 

 

 

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