TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS391
1SS391
Low Voltage High Speed Switching
z Low forward vo...
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS391
1SS391
Low
Voltage High Speed Switching
z Low forward
voltage z Small package
: VF (2) = 0.23V (typ.) @IF = 5mA : SC-61
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse
Voltage Reverse
voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range
VRM VR IFM IO IFSM P Tj Tstg Topr
15 10 200 * 100 * 1* 150 * 125 −55 to 125 −40 to 100
V V mA mA A mW °C °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum
JEDEC
―
JEITA
SC-61
TOSHIBA
2-3J1A
Weight: 0.013g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward
voltage
Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (3)
IR CT
Test Circuit
Test Condition
― IF = 1...