Schottky Barrier Diode Silicon Epitaxial
1SS413CT
1. Applications
• High-Speed Switching
2. Features
(1) Low forward vol...
Schottky Barrier Diode Silicon Epitaxial
1SS413CT
1. Applications
High-Speed Switching
2. Features
(1) Low forward
voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.)
3. Packaging and Internal Circuit
1SS413CT
CST2
1: Cathode 2: Anode
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse
voltage
VRM
25 V
Reverse
voltage
VR 20
Peak forward current
IFM 100 mA
Average rectified current
IO 50 mA
Power dissipation
PD (Note 1)
100
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj 125
Storage temperature
Tstg
-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm. Note 2: Measured with a 10 ms pulse.
Start of commercial product...