1SS416

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 1SS416 High Speed Switching Application z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA 0.1 0.6±0.05 Unit: mm A CATHODE MARK 1.0±0.05 0.8±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol VRM Rating 35 Unit V 0.2 ±0.05 0.07 M A 0.1 0.1±0.05 Reverse voltage VR 30 V Maximum (peak) forward current IFM 200 mA 0.48 +0.02 -0.03 Average forward current IO 100 mA Surge current (10ms) IFSM 1A Power dissipation P * 100 mW Junction temperature Storage temperature range Tj 125 °C Tstg −55∼125 °C fSC Operating temperature range Topr −40∼100 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― TOSHIBA 1-1L1A Weight: 0.6mg(typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm. Electrical Characteristics (Ta = 25°C) Characterist...