1SS416CT

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA 0.6±0.05 Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P* 35 V 30 V 200 mA 100 mA 1A 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C *: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimension of 4 mm × 4 mm. 0.38 +0.02 -0.03 0.5±0.03 0.05±0.03 CST2 JEDEC ― JEITA ― TOSHIBA 1-1P1A Weight: 0.7 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) ...