1SS418

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5mA 1SS418 Unit: mm CATHODE MARK Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V sESC Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P* 100 mA 1A 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 ~ 125 °C Operating temperature range Topr −40 ~ 100 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― TOSHIBA 1-1K1A Weight: 0.0011g(Typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR IR...