TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420
High-Speed Switching Applications
Low reverse current: IR = 5 µA (max)
1SS420
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse voltage
VRM
35
Reverse voltage
VR 30
Maximum (peak) forward current IFM 300
Average forward current
IO 200
Surge cur...
