1SS423

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 μA (max) 1SS423 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation VR IFM IO IFSM P 40 200* 100* 1* 100* V mA mA A mW 1.ANODE1 2.CATHODE2 3.CATHODE1 ANODE2 Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55~125 °C JEITA ― Operating temperature range Topr −40~100 °C Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-2S1C Weight: 0.0024 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: This is the absolute maximum rating for a single diode . Where two diodes are used, the absolute maximum rating per diode is 75% that for the single diode. El...