200N3LL

STP200N3LL N-channel 30 V, 2.15 mΩ typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) Features Order code VDS STP200N3LL 30 V RDS(on) max. 2.4 mΩ ID 120 A PTOT 176.5 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages. G(1) S(3) Order code STP200N3LL AM01475v1_Tab Table 1: Device summary Marking Package 200N3LL TO-220 Packing Tube July 2016 DocID028758 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents Contents STP200N3LL 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................