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FYP2010DN
FYP2010DN
Features
• Low forward voltage drop • High frequency properties and switching ...
www.DataSheet4U.com
FYP2010DN
FYP2010DN
Features
Low forward
voltage drop High frequency properties and switching speed Guard ring for over-
voltage protection
Applications
Switched mode power supply Freewheeling diodes
1 2 3
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse
Voltage Maximum DC Reverse
Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 100 100 20 150 -65 to +150 Units V V A A °C
Thermal Characteristics
Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 1.7 Units °C/W
Electrical Characteristics (per diode)
Symbol VFM * Parameter Maximum Instantaneous Forward
Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.77 0.65 0.75 mA 0.1 20 Units V
IRM *
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
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FYP2010DN
Typical Characteristics
100
10
Forward Current, I F[A]
10
Reverse Current, IR[mA]
1
T J=125 C
o
1
0.1
TJ=75 C
o
TJ=125 C
0.1
o
TJ=75 C TJ=25 C
o
o
0.01
T J=25 C
o
0.01 0.0
1E-3
0.5
1.0
1.5
20
40
60
80
100
Forward Vol...
