24N40E Datasheet

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24N40E Datasheet - MTW24N40E

24N40E   24N40E  

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MOTOROLA www.DataSheet4U.com Designer's SEMICONDUCTOR TECHNICAL DATA Order th is document by MTW24N40E/D TMOS E-FET .™ Power Field Effect Transistor TO-2 47 with Isolated Mounting Hole N–Chan nel Enhancement–Mode Silicon Gate Thi s high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without d egrading performance over time. In addi tion, this advanced TMOS E–FET is des igned to withstand high energy in the a valanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast r ecovery time. Designed for high voltage , high speed switching applications in power supplies, converters and PWM motor controls,

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