28C64

Features Fast Read Access Time – 120 ns Fast Byte Write – 200 µs or 1 ms Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control – READY/BUSY Open Drain Output – DATA Polling Low Power – 30 mA Active Current – 100 µA CMOS Standby Current High Reliability – Endurance: 104 or 105 Cycles – Data Retention: 10 Years 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout Commercial and Industrial Temperature Ranges Description The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read only memory with popular, easy-to-use features. The device is manufactured with Atmel’s reliable nonvolatile technology. (continued) Pin Configurations Pin Name A0 - A12 CE OE WE I/O0 - I/O7 RDY/BUSY NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs Ready/Busy Output No Connect Don’t Connect TSOP Top View PDIP, SOIC Top View RDY/BUSY (or NC) 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 I/O0 11 I/O1 12 I/O2 13 GND 14 28 VCC 27 WE 26 NC 25 A8 24 A9 23 A11 22 OE 21 A10 20 CE 19 I/O7 18 I/O6 17 I/O5 16 I/O4 15 I/O3 LCC, PLCC Top View 64K (8K x 8) Parallel EEPROMs AT28C64 AT28C64X 4 A7 3 A12 2 RDY/BUSY (or NC) 1 DC 32 VCC 31 WE 30 NC OE 1 A11 2 A9 3 A8 4 NC 5 WE 6 VCC 7 RDY/BUSY (or NC) 8 A12 9 A7 10 A6 11 A5 12 A4 13 A3 14 28 A10 27 CE 26 I/O7 25...