28F010

28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0 Watts Data Retention Power Integrated Program Erase Stop Timer Y Y Command Register Architecture for Microprocessor Microcontroller Compatible Write Interface Noise Immunity Features g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX TM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec Order 231369) Y Y Y Y Y Y Y Y Y Extended Temperature Options Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket onboard during subassembly test in-system during final test and in-system after-sale The 28F010 increases memory flexibility while contributing to time and cost savings The 28F010 is a 1024 kilobit nonvolatile memory organized as 131 072 bytes of 8 bits Intel’s 28F010 is offered in 32-pin plastic dip or 32-lead PLCC...