28F410-100M1

M28F410 M28F420 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter Blocks – One 96K Byte or 48K Word Main Block – Three 128K Byte or 64K Word Main Blocks 5V ± 10% SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES PROGRAM/ERASE CONTROLLER AUTOMATIC STATIC MODE LOW POWER CONSUMPTION – 60μA Typical in Standby – 0.2μA Typical in Deep Power Down – 20/25mA Typical Operating Consumption (Byte/Word) HIGH SPEED ACCESS TIME: 70ns EXTENDED TEMPERATURE RANGES PRELIMINARY DATA TSOP56 (N) 14 x 20mm 44 1 SO44 (M) Figure 1. Logic Diagram VCC VPP Table 1. Signal Names A0-A17 DQ0-DQ7 DQ8DQ14 DQ15A-1 E G W BYTE RP VPP VCC Address Inputs Data Input / Outputs Data Input / Outputs Data Input/Output or Address Input Chip Enable Output Enable Write Enable Byte/Word Organization Reset/Power Down/Boot Block Unlock Program & Erase Supply Voltage Supply Voltage 18 A0-A17 RP W E G M28F410 M28F420 DQ15A-1 15 DQ0-DQ14 BYTE VSS AI01130C March 1995 This is preliminary infor mationon a new product now in developmen t or undergoing evaluation. Details are subject to change without notice. 1/38 M28F410, M28F420 Figure 2A. TSOP Pin Connections Figure 2B. SO Pin Connections NC NC A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC VPP DU NC A17 ...