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28N50-CB

UTC

N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD 28N50-CB 28A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 28N50-CB is a N-Channel e...


UTC

28N50-CB

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Description
UNISONIC TECHNOLOGIES CO., LTD 28N50-CB 28A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 28N50-CB is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 28N50-CB is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology.  FEATURES * RDS(ON) ≤ 0.22Ω @ VGS=10V, ID=14A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 28N50L-T47-T 28N50G-T47-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-523.A 28N50-CB Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 500 ±30 V V Drain Current Continuous Pulsed (Note 2) ID IDM 28 56 A A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 240 mJ 3.8 V/ns Power Dissipation Junction Temperature PD 280 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute m...




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