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29F160BT Datasheet

Part Number 29F160BT
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Boot Block Single Supply Flash Memory
Datasheet 29F160BT Datasheet29F160BT Datasheet (PDF)

M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks www.DataSheet4U.com s ACCESS s s s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and To.

  29F160BT   29F160BT






Part Number 29F160BE
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description 16M (2M X 8/1M X 16) BIT
Datasheet 29F160BT Datasheet29F160BE Datasheet (PDF)

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29F160TE/BE-55/-70/-90 s GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase operations. The.

  29F160BT   29F160BT







Part Number 29F160BB
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Boot Block Single Supply Flash Memory
Datasheet 29F160BT Datasheet29F160BB Datasheet (PDF)

M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks www.DataSheet4U.com s ACCESS s s s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and To.

  29F160BT   29F160BT







Boot Block Single Supply Flash Memory

M29F160BT M29F160BB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks www.DataSheet4U.com s ACCESS s s s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin TSOP48 (N) 12 x 20mm s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend Figure 1. Logic Diagram s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29F160BT: 22CCh – Bottom Device Code M29F160BB: 224Bh A0-A19 W E G RP VCC s 20 15 DQ0-DQ14 DQ15A–1 M29F160BT M29F160BB BYTE RB s s s s VSS AI02920 March 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/22 M29F160BT, M29F160BB Figure 2. TSOP Connections A15 A14 A13 A12 A11 A10 A9 A8 A19 NC W RP NC NC RB A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 A16 BYTE VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 .


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