29F200BB

M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 45ns s PROGRAMMING TIME – 8µs per Byte/Word typical s 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – M29F200BT Device Code: 00D3h – M29F200BB Device Code: 00D4h 44 TSOP48 (N) 12 x 20mm 1 SO44 (M) Figure 1. Logic Diagram VCC 17 A0-A16 15 DQ0-DQ14 W DQ15A–1 M29F200BT E M29F200BB BYTE G RB RP VSS AI02912 October 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/22 M29F200BT, M29F200BB Figure 2A. TSOP Connections A15 1 48 A16 A14 BYTE A13 VSS A12 DQ15A–1 A11 DQ7 A10 DQ14 A9 DQ6 A8 DQ13 NC DQ5 NC DQ12 W DQ4 RP 12 M29F200BT 37 VCC NC 13 M29F200BB 36 DQ11 NC DQ3 RB D...