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29F32G08C Datasheet

Part Number 29F32G08C
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet 29F32G08C Datasheet29F32G08C Datasheet (PDF)

www.DataSheet.co.kr www.DataSheet4U.net Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBABA, MT29F64G08C[E/F]ABA, MT29F128G08C[J/K/M]ABA, MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB, MT29F64G08CFABB, MT29F64G08CECBB, MT29F128G08CJABB, MT29F128G08C[K/M]CBB, MT29F256G08CUCBB Features • Open NAND Flash Interface (ONFI) 2.1-compliant1 • Multiple-level cell (MLC) technology • Organization – Page size x8: 4320 .

  29F32G08C   29F32G08C






Part Number 29F32G08
Manufacturers Maxwell
Logo Maxwell
Description NAND Flash Module
Datasheet 29F32G08C Datasheet29F32G08 Datasheet (PDF)

NAND Flash Module 29F32G08 Preliminary FEATURES: NAND Flash Interface Single Level Cell (SLC) Technology ONFI 2.2 Compliant Operating Voltage VCC 3.0 - 3.6V VCCQ 1.7 - 1.95V or 3.0-3.6V High density 32Gbit per FLASH NAND die Supports higher speed designs with less capacitance/fewer I/O's to drive Page Size 8640 bytes (8192 + 448 spare bytes) Supports external BCH correction algorithms (16 bit correction per 540 bytes) Features High reliability data storage for demanding space applications Cera.

  29F32G08C   29F32G08C







NAND Flash Memory

www.DataSheet.co.kr www.DataSheet4U.net Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBABA, MT29F64G08C[E/F]ABA, MT29F128G08C[J/K/M]ABA, MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB, MT29F64G08CFABB, MT29F64G08CECBB, MT29F128G08CJABB, MT29F128G08C[K/M]CBB, MT29F256G08CUCBB Features • Open NAND Flash Interface (ONFI) 2.1-compliant1 • Multiple-level cell (MLC) technology • Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Block size: 256 pages (1024K + 56K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks; 256Gb: 32,768 blocks • Synchronous I/O performance – Up to synchronous timing mode 4 – Clock rate: 12ns (DDR) – Read/write throughput per pin: 166 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 4 – tRC/tWC: 25ns (MIN) • Array performance – Read page: 50µs (MAX) – Program page: 900µs (TYP) – Erase block: 3ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 108). • RESET (FFh) required as first command a.


2011-11-21 : PCB8573    ST-6M1    ST-10    ST-10M1    ST-10M2    U4221B    29F32G08C    MC14489B    PN544    MAGIC6   


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