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29LV160M Datasheet

Part Number 29LV160M
Manufacturers AMD
Logo AMD
Description 16 Megabit 3 Volt-only Sector Erase Flash Memory
Datasheet 29LV160M Datasheet29LV160M Datasheet (PDF)

ADVANCE INFORMATION Am29LV160M 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBitTM 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s Manufactured on 0.23 µm MirrorBitTM process technology — Fully compatible with Am2.

  29LV160M   29LV160M






Part Number 29LV160TE90TN
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description MBM29LV160TE90TN
Datasheet 29LV160M Datasheet29LV160TE90TN Datasheet (PDF)

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29LV160TE/BE -70/90/12 s GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for writ.

  29LV160M   29LV160M







Part Number 29LV160DB
Manufacturers AMD
Logo AMD
Description AM29LV160DB
Datasheet 29LV160M Datasheet29LV160DB Datasheet (PDF)

www.DataSheet4U.com Am29LV160D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29AL016D supersedes Am29LV160D and is the factory-recommended migration path for this device. Please refer to the S29AL016D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. The following document contains information on Spansion memory products. Con.

  29LV160M   29LV160M







Part Number 29LV160C
Manufacturers Macronix International
Logo Macronix International
Description 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Datasheet 29LV160M Datasheet29LV160C Datasheet (PDF)

MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operation • Fully compatible with MX29LV160B device • Fast access time: 55R/70/90ns www.DataSheet4U.com • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture - Byte/word Pr.

  29LV160M   29LV160M







Part Number 29LV160BT
Manufacturers Macronix International
Logo Macronix International
Description MX29LV160BT
Datasheet 29LV160M Datasheet29LV160BT Datasheet (PDF)

R MX29LV160BT/BB 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operation • Fully compatible with MX29LV160A device • Fast access time: 70/90ns www.DataSheet4U.com • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture - Byte/word Pr.

  29LV160M   29LV160M







16 Megabit 3 Volt-only Sector Erase Flash Memory

ADVANCE INFORMATION Am29LV160M 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBitTM 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s Manufactured on 0.23 µm MirrorBitTM process technology — Fully compatible with Am29LV160D device s High performance — Access times as fast as 70 ns s Ultra low power consumption (typical values at 5 MHz) — 400 nA Automatic Sleep mode current — 400 nA standby mode current — 15 mA read current — 40 mA program/erase current s Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences s Top or bottom boot block configurations available s Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases .


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