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29LV160TE90TN MBM29LV160TE90TN Datasheet PDF

MBM29LV160TE90TN

MBM29LV160TE90TN

 

 

 

Part Number 29LV160TE90TN
Description MBM29LV160TE90TN
Feature FUJITSU SEMICONDUCTOR DATA SHEET DS05-2 0883-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29LV160TE/BE -70/90/ 12 s GENERAL DESCRIPTION The MBM29LV160 TE/BE is a 16M-bit, 3.
0 V-only Flash me mory organized as 2M bytes of 8 bits ea ch or 1M words of 16 bits each.
The MBM 29LV160TE/BE is offered in a 48-pin TSO P (I), 48-pin CSOP and 48-ball FBGA pac kages.
The device is designed to be pro grammed in-system with the standard sys tem 3.
0 V VCC supply.
12.
0 V VPP and 5.
0 V VCC are not required for write or e rase operations.
The device can also be reprogrammed in standard EPROM program mers.
The standa .
Manufacture Fujitsu Media Devices
Datasheet
Download 29LV160TE90TN Datasheet

29LV160TE90TN

 

 

 


 

 

 

Part Number 29LV160TE90TN
Description MBM29LV160TE90TN
Feature FUJITSU SEMICONDUCTOR DATA SHEET DS05-2 0883-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29LV160TE/BE -70/90/ 12 s GENERAL DESCRIPTION The MBM29LV160 TE/BE is a 16M-bit, 3.
0 V-only Flash me mory organized as 2M bytes of 8 bits ea ch or 1M words of 16 bits each.
The MBM 29LV160TE/BE is offered in a 48-pin TSO P (I), 48-pin CSOP and 48-ball FBGA pac kages.
The device is designed to be pro grammed in-system with the standard sys tem 3.
0 V VCC supply.
12.
0 V VPP and 5.
0 V VCC are not required for write or e rase operations.
The device can also be reprogrammed in standard EPROM program mers.
The standa .
Manufacture Fujitsu Media Devices
Datasheet
Download 29LV160TE90TN Datasheet

29LV160TE90TN

 

 

 

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