2CL3512H

Power Semiconductor Technology High Voltage Silicon Diodes 2CL3512H High voltage silicon diodes Features Iz F（AV） 350mA z VRRM 20kV z High reliability Applications Rectification for high voltage power supply of magnetron in Micro wave oven and others Primary characteristics IF(AV) VRRM IFSM IRM VFM TJ max. 350mA 20kV 30A 5uA 12V 130 oC Mechanical data z Case: Molded Plastic Body z Epoxy meets UL 94V-0 flammability rating z Terminals: Pure tin plated leads, solderable per J-STD-002 and JESD22-B102, E3 suffix for consumer grade, meet JESD201 class 1A whisker test. Polarity: Color band denotes cathode end Maximum rating (Ta=25oC unless otherwise noted) Parameter Sym bol 2CL3512H Unit Maximum recurrent peak reverse voltage VRRM 20 KV Maximum RMS voltage VRMS 14 KV Average forward current 60HZ half-sine wave, Resistance load, Ta≤60℃ IF(AV) 350 mA Forward surge current 60HZ half-sine wave, 1cycle,Ta=25℃ IFSM 30 A Reverse surge current WP=1ms, Rectangular-wave, One-shot, Ta=25℃ IRSM 100 mA Peak forward voltage IFM=350mA VFM ≤12 V Peak reverse current VRM=VRRM IRRM1 ≤5 μA Virtual junction temperature T(vj) 130 ℃ Storage temperature Tstg -40 ~ +130 ℃ Notes: Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm×50mm×0.6mm Wind-cooled velocity is more than 0.5m/s Rev. A1 SiPower - The official marketing arm of Zhonghuan Semiconductor http://www.sipower.us Power Semiconductor Technology Typical ch...