SPECIFICATION
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Device Name Type Name Spec. No. :
: :
IGBT MODULE
2MBI1200UG-170 MS5F 5932
Sep. 3...
SPECIFICATION
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Device Name Type Name Spec. No. :
: :
IGBT MODULE
2MBI1200UG-170 MS5F 5932
Sep. 30 ’04 T.Nishimura Sep. 30 ’04 T.Miyasaka
Y.Seki
MS5F5932
1
13
H04-004-07b
R e v i s e d
Date Classification Ind. Content
R e c o r d s
Applied date Issued date Drawn Checked Checked Approved
Sep.-30-’04 Enactment
T.Miyasaka
Y.Seki
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MS5F5932
2 13
H04-004-06b
2MBI1200UG-170 / PKG.No. M248
1. Outline Drawing ( Unit : mm )
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2. Equivalent circuit
MS5F5932
3 13
H04-004-03a
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Items Collector-Emitter
voltage Gate-Emitter
voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Collector Power Dissipation Junction temperature
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Conditions
Maximum Ratings 1700 ±20
Units V V
Continuous 1ms
Tc=25°C Tc=80°C Tc=25°C Tc=80°C
1530 1200 3060 2400 1200 2400 4960 150 -40 ~ +125 W °C VAC Nm
A
1ms 1 device
Pc Tj Tstg Viso Mounting
Storage temperature Isolation
voltage between terminal and copper base *1
AC : 1min.
3400 5.75 10 2.1
Screw Torque *2
Main Terminals Sense Terminals
(*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6) Main Terminals 8~10 Nm (M8) Sense Terminals 1.8~2.1 Nm (M4) 4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Zero gate
voltage Collector current Gate-Emitter leakage current Gate-...